| PART |
Description |
Maker |
| DN8796MS |
3 V operation Hall IC, Alternating magnetic field operation
|
Panasonic
|
| MBM29DL161TE-70 MBM29DL161TE-90 MBM29DL162TE-90 MB |
16M (2MX8/1MX16) BIT Dual Operation
1M X 16 FLASH 3V PROM, 12 ns, PDSO48
TVS BIDIRECT 600W 48V SMB 16米（2米x 8/1M × 16）位双操
8 PORT MODULAR SWITCH
4 PORT 100MB MULTI-MODE FIBER
BANDWIDTH MANAGER MODULE TP
16M (2M X 8/1M X 16) BIT Dual Operation
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| 1N3305 1N3307B 1N3312B 1N3323B 1N3314B 1N3310B 1N3 |
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 22 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 140 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 10 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
Zener Voltage Regulator Diode 齐纳稳压二极
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 9.1 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 160 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
SILICON 50 WATT ZENER DIODES
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
|
TE Connectivity, Ltd.
Hammond Manufacturing Co., Ltd.
STMicroelectronics N.V.
B＆K Precision, Corp.
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-SCOTTSDALE
|
| 135D128X0006K2 135D128X0006T2 135D188X0006K2 135D2 |
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55C to 200C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55∑C to 200∑C Operation 钽案例与玻璃对钽密封密封的，55ΣC00ΣC行动
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55∑C to 200∑C Operation 钽案例与玻璃对钽密封密封的，55ΣC200ΣC行动
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55?? to 200?? Operation
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
| AM29DL800BB120FI AM29DL800BB90SEB AM29DL800BT90SEB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 1M X 8 FLASH 3V PROM, 120 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.0伏的CMOS只，同时作业快闪记忆
|
Advanced Micro Devices, Inc.
http://
|
| MBM29DL161BE MBM29DL161BE-12 MBM29DL161BE-70 MBM29 |
16M (2MX8/1MX16) BIT DUAL OPERATION
16M (2M X 8/1M X 16) BIT Dual Operation
|
FUJITSU[Fujitsu Media Devices Limited]
|
| NJU8710 NJU8710R |
2V Operation Clock-less Switching Driver for Class Amplifier
From old datasheet system
2V Operation Clock-less Switching Driver for Class D Amplifier 2V的运行时钟减少开关D类放大器驱动
|
New Japan Radio Co., Ltd.
|
| MC-4216LFC721 |
3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作电压.3V的动态RAM模块) 3.3 V工作电压800万字72位动态内存模块（工作电压.3伏的动态内存模块）
3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(宸ヤ??靛?涓?.3V?????AM妯″?)
|
NEC, Corp.
NEC Corp.
|
| WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
| MBM29DL16XBD-90 MBM29DL16XTD-70 MBM29DL16XTD-90 MB |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT Dual Operation
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation
|
Fujitsu Microelectronics
|
